? 2002 ixys all rights reserved to-247 ad g = gate, d = drain, s = source, tab = drain d (tab) symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c; r gs = 1 m ? -100 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c -36 a i dm t c = 25 c, pulse width limited by t j -144 a i ar t c = 25 c -36 a e ar t c = 25 c30mj p d t c = 25 c 180 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque 1.13/10 nm/lb.in. weight 6g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = -250 a -100 v v gs(th) v ds = v gs , i d = -250 a -3.0 -5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c -25 a v gs = 0 v t j = 125 c-1ma r ds(on) v gs = -10 v, i d = 0.5 i d25 75 m ? features ? international standard package jedec to-247 ad ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance (<5 nh) - easy to drive and to protect applications ? high side switching ? push-pull amplifiers ? dc choppers ? automatic test equipment advantages ? easy to mount with 1 screw (isolated mounting screw hole) ? space savings ? high power density 98908 (2/02) p-channel enhancement mode avalanche rated standard power mosfet ixth 36p10 advance technical information v dss = -100 v i d25 = -36 a r ds(on) = 75m ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixth 36p10 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - d rain 3 - source tab - drain 1 2 3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10 v; i d = i d25 , pulse test 6 12 s c iss 2800 pf c oss v gs = 0 v, v ds = -25 v, f = 1 mhz 1100 pf c rss 490 pf t d(on) 35 ns t r v gs = -10 v, v ds = 0.5 v dss , i d = 0.5 i d25 37 ns t d(off) r g = 4.7 ? (external) 65 ns t f 28 ns q g(on) 95 nc q gs v gs = -10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 nc q gd 40 nc r thjc 0.65 k/w r thcs 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 -36 a i sm repetitive; pulse width limited by t jm -144 a v sd i f = i s , v gs = 0 v, -3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , di/dt = 100 a/ s, v r = -50 v 180 ns
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